Biographical sketch

Guofu Niu received the B.S., M.S. and Ph.D. degrees in Electrical Engineering, all from Fudan University, Shanghai, China, in 1992, 1994, and 1997, respectively.

From 1995 to 1997, he was a research assistant at City University of Hong Kong. Since 1997, he has been with Auburn University, Auburn, AL, where he was post-doctoral fellow from 1997 to 2000, Associate Professor from 2000 to 2004, and Full Professor since 2004, in the department of electrical and computer engineering. He held an Alumni Professorship from 2005 to 2010.

His research and teaching activities include SiGe devices, RF CMOS, high-frequency on-chip characterization, noise, radiation effects, low temperature electronics, compact modeling and TCAD. He has published over 100 journal papers and over 100 conference papers, and is the co-author of the book Silicon-Germanium Heterojunction Bipolar Transistors, Artech House, 2003 (with John Cressler), and many book chapters.

Dr. Niu is an Editor of IEEE Transactions on Electron Devices. He has served on committees of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting (2001-2008), the IEEE Nuclear and Space Radiation Effects Conference (program committee, 2002, awards committee 2010, 2011), the IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (2004-2007, program chair 2007, general chair 2009), the ECS SiGe Materials, Processing and Device Symposium (2004-present), and the IEEE International SiGe Technology and Device Meeting (2012).