Selected Recent Publications (Out of 90)

  1. John D. Cressler and Guofu Niu, Silicon-Germanium Heterojunction Bipolar Transistors, Artech House, 2003.
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  2. Logic synthesis and circuit modeling of a programmable logic gate based on controlled quenching of series-connected negative differential resistance devices
    Kevin Chen and Guofu Niu
    IEEE Journal of Solid-State Circuits , Volume: 38, Issue: 2 , Page(s): 312- 318, feb. 2003
    [PDF Full-Text (992 KB)]

  3. A comparison of SEU tolerance in high-speed SiGe HBT digital logic designed with multiple circuit architectures
    Guofu Niu; Krithivasan, R.; Cressler, J.D.; Riggs, P.A.; Randall, B.A.; Marshall, P.W.; Reed, R.A.; Gilbert, B.
    IEEE Transactions on Nuclear Science , Volume: 49, Issue: 6, Part: 1 , Dec. 2002
    Page(s): 3107- 3114

    [PDF Full-Text (457 KB)]

  4. Modeling and Characterization of Low-frequency Noise Figures-of-merit in SiGe HBTs for RFIC Applications
    Jin Tang, Guofu Niu; Zhenrong Jin; Cressler, J.D.; Shiming Zhang; Alvin Joseph, and Harame, D.L.
    IEEE Transactions on Microwave Theory and Techniques - RFIC Special Issue , Volume: 50, Issue: 11 , nov. 2002
    in press

    [PDF Full-Text (174 KB)]

  5. RF linearity characteristics of SiGe HBTs
    Guofu Niu; Qingqing Liang; Cressler, J.D.; Webster, C.S.; Harame, D.L.
    IEEE Transactions on Microwave Theory and Techniques - RFIC Special Issue , Volume: 49, Issue: 9 , Sep. 2001
    Page(s): 1558 -1565

    [PDF Full-Text (204 KB)]

  6. Transistor noise in SiGe HBT RF technology
    Niu, G.; Jin, Z.; Cressler, J.D.; Rapeta, R.; Joseph, A.J.; Harame, D.
    IEEE Journal of Solid-State Circuits , Volume: 36, Issue: 9 , Sep. 2001
    Page(s): 1424 - 1427

    [PDF Full-Text (204 KB)]

  7. A unified approach to RF and microwave noise parameter modeling in bipolar transistors
    Niu, G.; Cressler, J.D.; Shiming Zhang; Ansley, W.E.; Webster, C.S.; Harame, D.L.
    IEEE Transactions on Electron Devices , Volume: 48, Issue: 11 , Nov. 2001
    Page(s): 2568 -2574

    [PDF Full-Text (160 KB)]

  8. Modeling of single-event effects in circuit-hardened high-speed SiGe HBT logic
    Niu, G.; Krithivasan, R.; Cressler, J.D.; Marshall, P.; Marshall, C.; Reed, R.; Harame, D.L.
    IEEE Transactions on Nuclear Science , Volume: 48, Issue: 6, Part: 1 , Dec. 2001
    Page(s): 1849-1854

    [PDF Full-Text (142 KB)]

  9. Noise modeling and SiGe profile design tradeoffs for RF applications
    Guofu Niu; Shiming Zhang; Cressler, J.D.; Joseph, A.J.; Fairbanks, J.S.; Larson, L.E.; Webster, C.S.; Ansley, W.E.; Harame, D.L.
    IEEE Transactions on Electron Devices , Volume: 47, Issue: 11 , Nov. 2000
    Page(s): 2037 -2044

    [PDF Full-Text (152 KB)]

  10. Noise parameter optimization of UHV/CVD SiGe HBT's for RF and microwave applications
    Guofu Niu; Ansley, W.E.; Shiming Zhang; Cressler, J.D.; Webster, C.S.; Groves, R.A.
    IEEE Transactions on Electron Devices , Volume: 46, Issue: 8 , Aug. 1999
    Page(s): 1589 -1598

    [PDF Full-Text (356 KB)]

  11. Measurement of collector-base junction avalanche multiplication effects in advanced UHV/CVD SiGe HBT's
    Niu, G.; Cressler, J.D.; Zhang, S.; Gogineni, U.; Ahlgren, D.C.
    IEEE Transactions on Electron Devices , Volume: 46 Issue: 5 , May 1999
    Page(s): 1007 -1015

    [PDF Full-Text (348 KB)]